| PART |
Description |
Maker |
| GS8330LW72C-200 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 72 LATE-WRITE SRAM, 2.1 ns, PBGA209
36Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI Technology, Inc.
|
| AT34C02BN-10SU-1.7 AT34C02B-14 |
Two-wire Serial EEPROM with Permanent and Reversible Software Write Protect 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Hardware Write Protection for the Entire Array
|
Atmel, Corp.
ATMEL Corporation
|
| CS-514-4DW24 CS-514-2DW18 CS-514-6DW28 CS-514-6FN2 |
4-Channel Disk/Tape Read/Write Circuit
6通道写电
4通道的磁磁带写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
6-Channel Read/Write Circuit
|
Glenair, Inc.
|
| GS8170DW36AC GS8170DW36AC-250 GS8170DW36AC-350 GS8 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 35.7x1Dp的CMOS的I / O双晚SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 1.8 ns, PBGA209
|
GSI Technology, Inc.
|
| GS8170LW36AC |
18Mb B>1x1Lp CMOS I/O Late Write SigmaRAM
18Mb x1Lp CMOS I/O Late Write SigmaRAM 35.7x1Lp的CMOS的I / O后写SigmaRAM
|
GSI Technology, Inc.
|
| GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.25 ns, PBGA209
|
GSI Technology, Inc.
|
| SSI32R2210RX-2CL SSI32R2212RX-2CL SSI32R2211RX-2CL |
2-Channel Disk Read/Write Circuit 2通道磁盘写电
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
Epson (China) Co., Ltd.
Electronic Theatre Controls, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| SSI32R2300R-2CN SSI32R2301-4CL |
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
California Micro Devices Corporation
Samsung Semiconductor Co., Ltd.
|
| CXA1362Q |
READ/WRITE AMPLIFIER FOR FLOPPY DISK DRIVE WITH BUILT-IN FILTER 写放大器，软盘驱动器与内置过滤器
Read/Write Amplifier for Floppy Disk Drive
|
Sony, Corp.
|
| GS8170LW36C-333 GS8170LW36C-250 GS8170LW36C-250I G |
333MHz 512K x 36 18MB double late write sigmaRAM SRAM
250MHz 512K x 36 18MB double late write sigmaRAM SRAM
300MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 256K x 72 18MB double late write sigmaRAM SRAM
250MHz 256K x 72 18MB double late write sigmaRAM SRAM
300MHz 1M x 18 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
| VM710415SSL VM710410POL VM710210POL VM710425IVSL V |
4-Channel Disk/Tape Read/Write Circuit
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
STMicroelectronics N.V.
|
